Atomic surface on a Ni alloy produced by novel green chemical mechanical polishing

LG Dong and ZY Zhang and F Zhao and QY Li and HX Zhou and XF Yang and XQ Liu and JD Guo and X Zheng, TRIBOLOGY INTERNATIONAL, 211, 110902 (2025).

DOI: 10.1016/j.triboint.2025.110902

It poses a challenge to garner surface roughness less than 0.5 nm using a green polishing for a Ni alloy. To solve this challenge, a novel green chemical mechanical polishing (CMP) was developed, containing silica, citric acid and hydrogen peroxide. After CMP, surface roughness of 0.215 nm was achieved on a Ni alloy of GH3536 at a measurement area of 50 x 50 mu m2, and the material removal rate (MRR) is 43.8 nm/min. Polishing mechanism is elucidated by nanoscratching through molecular dynamics (MD) simulations. MD simulations reveal that rolling of abrasives between the Ni alloy and polishing pad dominates the polishing process. Densification of silica abrasives during rolling could alleviate the compressive stress compared with that in nanoscratching.'

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