Influence of Si buffer layer on the crystal quality of SiGe films in Ge/Si/SiGe heterostructures: A molecular dynamics investigation

JN Xie and T Lin and CL Wang, SURFACE SCIENCE, 761, 122790 (2025).

DOI: 10.1016/j.susc.2025.122790

SiGe materials have become a research hotspot due to their important applications in semiconductor devices, especially in optoelectronic and high-speed electronic devices. In this study, based on molecular dynamics simulations, the influence of the Si buffer layer on the quality of films in Ge/Si/SiGe heterostructures is investigated. By simulating the growth process of the Ge/Si/SiGe heterostructure, a deposition model based on Ge (100) substrates is established. Inspired by the concept of reverse gradient buffer layers, Si buffer layers are directly grown on Ge substrates, followed by the deposition of SiGe films. This study primarily investigates the effects of the growth temperature and deposition thickness of the Si buffer layer on the quality of SiGe films. Based on the deposition parameters identified as suitable under the current simulation conditions (620 degrees C, 9.7 nm), the influence of the buffer layer on SiGe films with varying Ge compositions is further analyzed. The results show that the dislocations and stacking faults formed in the Si buffer layer effectively relieve the stress caused by lattice mismatch, thus improving the crystal quality of the subsequent SiGe films. This study provides theoretical insights into the Ge/Si/SiGe heterostructure film growth process, which helps enhance the quality of SiGe films and expands their applications in semiconductor devices.

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