Role of domain walls on imprint and fatigue in HfO2-based ferroelectrics

MT Xie and HY Yu and BH Zhang and CS Xu and HJ Xiang, PHYSICAL REVIEW B, 111, 184108 (2025).

DOI: 10.1103/PhysRevB.111.184108

HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantly limited by fatigue and imprint phenomena, which affect device lifetime and memory capabilities. Here, to accurately describe the dynamics and field effects of HfO2, we adopt our newly developed DREAM-Allegro network scheme and develop a comprehensive machine-learning model for HfO2. Such a model can predict not only the interatomic potential, but also the Born effective charges for any structures. Applying such model, we explore the role of domain dynamics in HfO2 and find that the fatigue and imprint phenomena are closely related to the domain and domain-wall dynamics, where the dynamics can be summarized into two pivotal switching pathways. Based on the different atomic motions in the two paths, we propose that an inclined electric field can sufficiently suppress fatigue and enhancing the performance of HfO2-based ferroelectric devices.

Return to Publications page