Memorization of Strain-Induced Moire Patterns in Vertical van der Waals Materials

A Dey and N Hasan and SM Wu and H Askari, ACS APPLIED MATERIALS & INTERFACES, 17, 16223-16233 (2025).

DOI: 10.1021/acsami.4c22462

Twisting layers in van der Waals (vdW) materials have traditionally produced moire patterns but often suffer from alignment issues and nonuniformity due to the sensitivity of twist angles. Applying strain alone can also generate these patterns, eliminating the need for interlayer rotation and enabling controlled, reproducible moire formation. We present the mechanistic principles governing the evolution of strain-induced moire patterns in vertically stacked graphene through atomistic simulations. By analyzing local strain distribution, we identify a three-stage interlayer slippage process responsible for pattern formation. Our analyses reveal that these triangular moire domains are stable and retained upon unloading, ensuring consistent and reproducible pattern formation even after strain removal. Additionally, we demonstrate that this strain history can be utilized to reapply load in a step-by-step process to achieve uniform moire domains without requiring higher strain magnitudes. This approach provides a robust mechanism for designing wafer-scale quantum materials with uniform and reproducible moire superlattices.

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