Temperature dependence of two-dimensional structural evolution of monocrystalline 6H-SiC with vacancy and processing defects

P Zhou and CF Cheung, CERAMICS INTERNATIONAL, 51, 9176-9188 (2025).

DOI: 10.1016/j.ceramint.2024.12.351

Two-dimensional silicon carbide has potential application in electronics and photonics fields due to its unique properties. The evolution characteristics of the two-dimensional structure in silicon carbide substrates with different external temperature has not been reported. The influence of vacancy defects and processing defects on the formation of two-dimensional structures are investigated. The two-dimensional structural evolution, coordination numbers, bond lengths and bond angles features, are mainly discussed. Investigation results show that the 6H-SiC has excellent thermal stability. Honeycomb layered two- dimensional structures with one atomic layered thickness is formed in 6H-SiC with extremely high temperature at 3500 K. The two-dimensional layered structure is originated from Si-C bilayer in 6H-SiC. The presence of vacancy and processing defects inhibits the two-dimensional structural transition of 6H-SiC. Our investigations would provide valuable insights into the preparation of two-dimensional SiC.

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