Strain-induced lateral heterostructures: Hole localization and the emergence of flat bands in rippled MoS2 monolayers

M Alawein and JW Ager and A Javey and DC Chrzan, PHYSICAL REVIEW MATERIALS, 9, L021002 (2025).

DOI: 10.1103/PhysRevMaterials.9.L021002

The formation of 2D lateral heterostructures in rippled MoS2 and similar transition metal dichalcogenides (TMDs) is studied using density functional theory. Compression of rippled TMDs beyond a threshold compression leads to the formation of a flat valence band associated with strongly localized holes. The implications for exciton manipulation and the emergence of one-dimensional heavy fermion behavior are discussed.

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