Molecular dynamics simulation of ion implantation-assisted grinding of 4 H-SiC single-crystal

YB Wu and SJ Wu and DZ Wang and JP Chen and YR Song, ARCHIVES OF CIVIL AND MECHANICAL ENGINEERING, 26, 28 (2025).

DOI: 10.1007/s43452-025-01397-y

Single-crystal silicon carbide (SiC) is recognized as a promising semiconductor material that exhibits multiple polytypes. Among these polytypes, 4 H-SiC is extensively employed in fabricating electronic devices because of its superior properties. The inherent anisotropy, high hardness, and brittleness of 4 H-SiC present significant challenges in machining. Compared to conventional grinding, ion implantation- assisted grinding enhances machining efficiency and quality; however, the individual and synergistic effects of ion implantation parameters on 4 H-SiC machining remain underexplored. In this investigation, the single-grit diamond grinding process of 4 H-SiC was examined, both with and without ion implantation, using molecular dynamics simulations. The impacts of varying ion implantation energies and doses on material modification behavior and grinding performance were assessed. Particularly, two factors determining the ion implantation dose, namely the number of implanted ions and the size of the implantation area, were considered independently. The results indicate that both the grinding force and the grinding temperature decrease with increasing implantation energy and dose. Furthermore, higher implantation energy or a greater number of implanted ions enhance material modification efficiency and removal rate. Ion implantation modification reduces machining stress and improves machining quality. When adjusting the ion implantation dose, priority should be given to changing the number of implanted ions. This study not only deepens our understanding of the mechanisms behind material removal and damage evolution but also offers a theoretical foundation for optimizing parameters in ion implantation-assisted machining.

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