Effect of the SiC Film Thickness on the Morphology of Swift Heavy Ion Tracks

DI Zainutdinov and AE Volkov, CRYSTALLOGRAPHY REPORTS, 70, 1194-1200 (2025).

DOI: 10.1134/S1063774525601133

Parameters of tracks of swift heavy ions stopped in the electron energy loss regime in SiC films with a thickness of 10-100 nm have been determined. A model has been used that describes all stages of the track formation, from ionization and heating of the lattice (MC TREKIS-3) to its complete relaxation (classical molecular dynamics). Under irradiation by a 710-MeV Bi ion, surface nanohillocks are formed, the height of which increases with the film thickness L, attaining a constant value of 5.7 nm at L > 30 nm. Nanocavities surrounded by defect clusters remain along the ion trajectory over the entire volume of the films with L < 100 nm. In the 100 nm-thick film, a defect region near the surface is cone-shaped and extends to a depth of 35 nm.

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