Dislocation extension in coarse-grained Al reinforced by SiC nanowires under complex stress condition

YM Wu and RD Pan and JJ Schwiedrzik and YX Zhou and C Zhou and JR Qian and WS Yang and GH Wu, CERAMICS INTERNATIONAL, 50, 46259-46272 (2024).

DOI: 10.1016/j.ceramint.2024.08.468

Stacking faults (SFs) could be generated in aluminum (Al) via full dislocations extension under extreme stress. However, the extension behavior of the dislocations related to the stress conditions have not been studied comprehensively. In this study, SFs were generated solely under extreme stress condition in coarse-grained Al nanocomposites, where high content of Silicon Carbide nanowires (SiCnw) was introduced as reinforcement. Dislocation extension behaviors under normal and shear stress were predicted using an atomistic approach comparing with experiment methods. The extension ability of full dislocations was studied in terms of complex stress forced on partial dislocations and the relationship between stress condition and the SF width was established by stress analysis. The generated SFs were further proved to offer superb additional strengthening effect for the composites. This study provides a new idea and theory for designing of SF generation in coarse-grained Al based nanocomposites.

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