Cryo-FIB machining of group III-V semiconductors suppresses surface nanodroplets

JN Sun and Y Zhang and QH Xiao and YL Han and L Zhang, CIRP ANNALS- MANUFACTURING TECHNOLOGY, 73, 169-172 (2024).

DOI: 10.1016/j.cirp.2024.04.022

Under ion beam radiation, surface defects in forms of nanodroplet are randomly formed on group III-V semiconductors' surfaces. This work demonstrates the effectiveness of cryo-FIB on suppressing surface nanodroplets formation. Using GaAs as a representative, it was found that the surface nanodroplets derived from a phase transition process of the arsenide atoms. The redundant gallium atoms will then accumulate and eventually form surface nanodroplets. Cryo-FIB at 80 K can effetely suppress this phase transition process, leading to a defect free surface finish. The effectiveness of cryo-FIB on other group III-V semiconductors including InP and InAs are also successfully demonstrated. (c) 2024 CIRP. Published by Elsevier Ltd. All rights reserved.

Return to Publications page