Silicon-on-Insulator Structures Microtopography Transformations Features after Photonic and Corpuscular Radiation Exposure

BA Loginov and DY Blinnikov and VS Vtorova and VV Kirillova and EA Liashko and VS Makeev and AR Pervykh and ND Abrosimova and IY Zabavichev and AS Puzanov and EV Volkova and EA Tarasova and SV Obolensky, TECHNICAL PHYSICS, 69, 1629-1635 (2024).

DOI: 10.1134/S1063784224060227

The article presents the results of studies of microrelief parameters and electrophysical characteristics of "silicon on insulator" structures after exposure to gamma and gamma neutron radiation. Experimental studies were carried out using the methods of atomic force microscopy and pseudo-MOS transistor. On the basis of the data obtained, an estimate was made of the average size and area of the space charge of clusters of radiation defects.

Return to Publications page