Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface

KP Wu and L Zhang and FZ Li and LW Sang and MY Liao and K Tang and JD Ye and SL Gu, CARBON, 223, 119021 (2024).

DOI: 10.1016/j.carbon.2024.119021

Effective heat dissipation of semiconductor devices is crucial for their extended lifespan and operational stability, and the interface of semiconductors provides an effective window for thermal design and management. In this work, we have systematically investigated the effect of the carbon vacancy on the thermal conductivity of diamond and the interface thermal conductance (ITC) of Cu/diamond by using both first- principles calculation and molecular dynamics methods. Although the carbon vacancy leads to a decrease in the thermal conductivity of diamond, a marked increase in ITC from 37.98 MWm- 2K-1 to about 177 MWm- 2K-1 for diamond (1 1 1) plane and from 78.8 MWm- 2K-1 to about 241 MWm- 2K-1 for diamond (0 0 1) plane is observed between Cu and diamond with carbon vacancy. The increase of the ITC is mainly due to the anharmonic phonon scattering, revealed by the phonon density of states and phonon participation ratio.

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