Electric field tunable bandgap in twisted double trilayer graphene

ML Perrin and A Jayaraj and B Ghawri and K Watanabe and T Taniguchi and D Passerone and M Calame and J Zhang, NPJ 2D MATERIALS AND APPLICATIONS, 8, 14 (2024).

DOI: 10.1038/s41699-024-00449-w

Twisted van der Waals heterostructures have recently emerged as a versatile platform for engineering interaction-driven, topological phenomena with a high degree of control and tunability. Since the initial discovery of correlated phases in twisted bilayer graphene, a wide range of moir & eacute; materials have emerged with fascinating electronic properties. While the field of twistronics has rapidly evolved and now includes a range of multi-layered systems, moir & eacute; systems comprised of double trilayer graphene remain elusive. Here, we report electrical transport measurements combined with tight- binding calculations in twisted double trilayer graphene (TDTLG). We demonstrate that small-angle TDTLG (similar to 1.7-2.0(degrees)) exhibits an intrinsic bandgap at the charge neutrality point. Moreover, by tuning the displacement field, we observe a continuous insulator- semimetal-insulator transition at the CNP, which is also captured by tight-binding calculations. These results establish TDTLG systems as a highly tunable platform for further exploration of magneto-transport and optoelectronic properties.

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