Simulation of Copper Nanostructure Formation on Silicon Dioxide Microsubstrate Surface

II Fairushin and AY Shemakhin, HIGH ENERGY CHEMISTRY, 57, S41-S44 (2023).

DOI: 10.1134/S001814392307010X

The process of copper nanostructure formation on a silicon dioxide substrate was simulated using the molecular dynamics method. The process parameters corresponded to the conditions in a low-pressure gas- discharge plasma. The relationship between the nanostructure formation rate and the main plasma parameters was determined.

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