Electronic, Thermal and Mechanical Properties of Carbon and Boron Nitride Holey Graphyne Monolayers

B Mortazavi, MATERIALS, 16, 6642 (2023).

DOI: 10.3390/ma16206642

In a recent experimental accomplishment, a two-dimensional holey graphyne semiconducting nanosheet with unusual annulative pi-extension has been fabricated. Motivated by the aforementioned advance, herein we theoretically explore the electronic, dynamical stability, thermal and mechanical properties of carbon (C) and boron nitride (BN) holey graphyne (HGY) monolayers. Density functional theory (DFT) results reveal that while the C-HGY monolayer shows an appealing direct gap of 1.00 (0.50) eV according to the HSE06(PBE) functional, the BNHGY monolayer is an indirect insulator with large band gaps of 5.58 (4.20) eV. Furthermore, the elastic modulus (ultimate tensile strength) values of the single-layer C- and BN-HGY are predicted to be 127(41) and 105(29) GPa, respectively. The phononic and thermal properties are further investigated using machine learning interatomic potentials (MLIPs). The predicted phonon spectra confirm the dynamical stability of these novel nanoporous lattices. The room temperature lattice thermal conductivity of the considered monolayers is estimated to be very close, around 14.0 +/- 1.5 W/mK. At room temperature, the C-HGY and BN-HGY monolayers are predicted to yield an ultrahigh negative thermal expansion coefficient, by more than one order of magnitude larger than that of the graphene. The presented results reveal decent stability, anomalously low elastic modulus to tensile strength ratio, ultrahigh negative thermal expansion coefficients and moderate lattice thermal conductivity of the semiconducting C-HGY and insulating BN-HGY monolayers.

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