Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code

P Józwik and A Caçador and K Lorenz and R Ratajczak and C Mieszczynsk, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 538, 198-204 (2023).

DOI: 10.1016/j.nimb.2023.03.002

There has been a long interest in the analysis of radiation damage caused by ion beams due to their presence in space or the nuclear industry and their application in materials modification. One of the methods used for that purpose is Rutherford Backscattering Spectrometry in channeling mode (RBS/C). However, the presence of different defect types makes it difficult to interpret RBS/C spectra so extended defects are often neglected in the data analysis. The McChasy Monte Carlo simulation code has been developed to analyze channeling data in crystals containing different defect types using periodically repeated relatively small simulation cells (similar to 10(2) atoms). Here we report and describe its recent feature: a model of dislocation loops. Having in mind that the interactions of the channeling ion beam with defects depend on the beam energy, the validity of the model was confirmed by analyzing RBS/C experiments performed at different energies for the case of 300 keV Eu-implanted GaN.

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