Atomistic reaction mechanism of CVD grown MoS2 through MoO3 and H2S precursors
A Arafat and MS Islam and N Ferdous and ASMJ Islam and MMH Sarkar and C Stampfl and J Park, SCIENTIFIC REPORTS, 12, 16085 (2022).
Chemical vapor deposition (CVD) through sulfidation of MoO3 is one of the most important synthesis techniques to obtain large-scale and high- quality two-dimensional (2D) MoS2. Recently, H2S precursor is being used in the CVD technique to synthesize 2D MoS2. Although several studies have been carried out to examine the mechanism of MoS2 growth in the presence of sulfur and MoO3 precursors, the growth of MoS2 in the presence of H2S precursor has largely remained unknown. In this study, we present a Reactive molecular dynamics (RMD) simulation to investigate the reaction mechanism of MoS2 from MoO3 and H2S precursors. The intermediate molecules formation, the reason behind those formations, and the surface compositions of MoOxSyHz during the initial steps of CVD have all been quantified. Surprisingly, a sudden separation of sulfur atoms from the surface was observed in the H2S precursor system due to the substantial oxygen evolution after 1660 K. The sulfur detachments and oxygen evolution from the surface were found to have a linear relationship. In addition, the intermediate molecules and surface bonds of MoS2 synthesized by MoO3 and H2S precursors were compared to those of a system using S-2 and MoO3 precursors. The most stable subsidiary formation from the H2S precursor was found to be H2O, whereas in case of S-2 precursor it was SO. These results provide a valuable insight in the formation of large-scale and high-quality 2D MoS2 by the CVD technique.
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