Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions

II Fairushin and AY Shemakhin and AA Khabir'yanova, HIGH ENERGY CHEMISTRY, 55, 399-401 (2021).

DOI: 10.1134/S0018143921050039

Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coefficient are consistent with experimental data. The nanofilm growth rate has been determined.

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